rf0 1 008 , rev . e (1 1/15 /13 ) ?201 3 microsemi corporation page 1 of 7 m 1.5ke 6. 8a C m 1.5ke40 0ca (e3) available 1500 w att unidirectional and bidirectional t ransient v oltage s uppressor screening in reference to mil - prf - 19500 available description case 1 p ackage the popular transient voltage suppressor series of m 1.5ke6.8 C m 1.5ke400ca with its various upscreening options offer an extended voltage range and provide s a wide variety of commercial, high reliability, rohs and bidirectional option s . all have the same high p eak p ulse p ower rating of 1500 w and extremely fast response time. they can protect from secondary effects of lightning per iec61000 -4- 5 and the class levels as shown below as well as voltage transients from inductive switching and rfi. since their response time is virtually instantaneous, they also protect from esd and eft per iec61000 -4- 2 and iec61000 -4- 4. important: for the latest information, visit our website http://www.microsemi .com . features ? high reliability devices with fabrication and assembly lot traceability ? economical plastic encapsulated tvs series for thru - hole mounting ? 3 lot norm screening performed on standby current (i d ) ? 100% surge tested devices suppress transients up to 1500 watts @ 10/1000 s (see f igure 1 ) ? enhanced reliability screening available in reference to mil - prf - 19500. refer to hirel non - hermetic product portfolio for more details on the screening options . (see part nomenclature for all options.) ? enhanced reliability source controlled devices have wafer fabrication and assembly lot traceability ? moisture classification is level 1 with no dry pack required per ipc/jedec j - std - 020b ? rohs compliant versions available applications / benefits ? high - reliability devices ? protection from switching and rfi induced transient s ? compliant to iec 61 0 00 -4- 2 a n d iec 61 000 -4- 4 for esd and eft protection respectively ? secondary lightning protection per iec61000 -4- 5 with 42 o hms source impedance: class 1: m 1.5ke 6. 8a to m 1.5ke20 0ca class 2: m 1.5ke 6.8 a to m .5ke18 0ca class 3: m 1.5ke 6.8 a to m 1.5ke91c a class 4: m 1.5ke 6 .8 a to m 1.5ke43c a ? secondary lightning protection per iec61000 -4- 5 with 12 o hms source impedance: class 1 : m 1.5ke 6.8 a to m 1.5ke11 0ca class 2: m 1.5ke 6.8 a to m 1.5ke56c a class 3: m 1.5ke 6.8 a to m 1.5ke27c a class 4: m 1.5ke 6 .8 a to m 1.5ke13c a ? secondary lightning protection per iec61000 -4- 5 with 2 o hms source impedance: class 2: m 1.5ke 6.8 a to m 1.5ke24c a class 3: m 1.5ke 6.8 a to m 1.5ke12c a msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fa x: + 353 (0) 65 6822298 website: www.microsemi.com downloaded from: http:///
rf0 1 008 , rev . e (1 1/15 /13 ) ?201 3 microsemi corporation page 2 of 7 m 1.5ke 6. 8a C m 1.5ke40 0ca (e3) m axim um ratings parameters/test conditions symbol value unit junction and storage temperature t j and t s tg -6 5 to +15 0 oc thermal resistance, junction to lead @ 0.375 inch (10 mm) from body r ? jl 22 oc /w thermal resistance, junction to ambient (1 ) r ? ja 82 oc /w peak pulse power @ t l = +25 oc (2) p pp 1500 w rated average p ower d issipation @ t l = +40 oc @ t a = +25 oc p m(av) 5 1.52 (1) w t clamping (0 volts to v ( br) min) unidirectional bidi rectional < 100 < 5 ps ns surge peak forward current (3) i fsm 200 a solder temperature @ 10 s t sp 260 o c notes : 1. w hen mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm . 2. at 10/1000 s with repetitio n rate of 0.01% or less (see f igure 1 ). 3. at 8.3 ms half - sine wave for unidirectional devices only. mechanical and packaging ? case: void - free transfer molded thermosetting epoxy body meeting ul94v -0 ? terminal s: tin - lead or rohs c ompliant annealed matte -t in plating readily solderable per mil - s td - 750 method 2026 ? marking: part number and polarity band ? polarity: cathode indicated by band . no cathode band on bidirectional devices. ? tape & reel option: standard per eia - 29 6 (add tr suffix to part number). consult factory for quantities. ? w eight: approximately 1. 5 grams ? see p ackage d imensions on last page. part nomenclature m 1.5 k e 6.5 c a (e3) reliability level * m ma mx mxl (*see hirel non - hermetic product portfolio ) peak pulse power kilowatt rating encapsulated plastic package rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant +/ - 5% tolerance level polarity c = bi - directional blank = unidirectional nominal breakdown voltage ( see electrical characteristics t able ) downloaded from: http:///
rf0 1 008 , rev . e (1 1/15 /13 ) ?201 3 microsemi corporation page 3 of 7 m 1.5ke 6. 8a C m 1.5ke40 0ca (e3) symbols & definitions symbol definition v( br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. i (br) breakdown current: the current used for measuring b reakdown v oltage v (br) . v (br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. v c clamping voltage: the voltage across the device in a region of low differential resistance duri ng the application of an impulse current (i pp ) for a specified waveform. i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetitive peak imp ulse cu rrent that may be applied to a device. a random recurring or nonrepetitive transient current is usually due t o an external cause, and it is assumed that its effect will have completely disappeared before the nex t transient arrives. p pp peak pulse power. the rated random recurring peak impulse power or rated nonrepetitive peak impulse power. the impulse power is the maximum - rated value of the product of i pp and v c . i d standby current: the current through the device at rated stand - off voltage. downloaded from: http:///
rf0 1 008 , rev . e (1 1/15 /13 ) ?201 3 microsemi corporation page 4 of 7 m 1.5ke 6. 8a C m 1.5ke40 0ca (e3) electr ical characteristics @ 25 o c industry t ype number rated standoff voltage v wm (note 1) breakdown voltage v (br) @ i (br) maximum clamping voltage v c @ i pp maximum standby current i d @ v wm maximum peak pulse current i pp (fig. 2) maximum tempe rature coefficient of v (br) v (br) volts volts min. max. ma volts a a %/ o c m 1.5ke6.8a m 1.5ke7.5a 5.80 6.40 6.45 C 7.14 7.13 C 7.88 10 10 10.5 11.3 1000 500 143.0 132.0 0 .057 0 .061 m 1.5ke8.2a m 1.5ke9.1a 7.02 7.78 7.79 C 8.61 8.65 C 9.55 10 1 12.1 13.4 200 50 124.0 112.0 0 .065 0 .068 m 1.5ke10a m 1.5ke11a 8.55 9.40 9.50 C 10.50 10.50 C 11.60 1 1 14.5 15.6 10 5 103.0 96.0 0 .073 0 .075 m 1.5ke12a m 1.5ke13a 10.22 11.10 11.40 C 12.60 12.40 C 13.70 1 1 16.7 18.2 5 5 90.0 82.0 0 .078 0 .081 m 1.5ke15a m 1.5ke16a 12.80 13.60 14.30 C 15.80 15.20 C 16.80 1 1 21.2 22.5 1 1 71.0 67.0 0 .084 0 .086 m 1.5ke18a m 1.5ke20a 15.30 17.10 17.10 C 18.90 19.00 C 21.00 1 1 25.2 27.7 1 1 59.5 54.0 0 .088 0 .090 m 1.5ke22a m 1.5ke24a 18.80 20.50 20.90 C 23.10 22.80 C 25.20 1 1 30.6 33.2 1 1 49.0 45.0 0 .092 0 .094 m 1.5ke27a m 1.5ke30a 23.10 25.60 25.70 C 28.40 28.50 C 31.50 1 1 37.5 41.4 1 1 40.0 36.0 0 .096 0 .097 m 1.5ke33a m 1.5ke36a 28.20 30.80 31.40 C 34.70 34.20 C 37.80 1 1 45.7 49.9 1 1 33.0 30.0 0 .098 0 .099 m 1.5ke39a m 1.5ke43a 33.30 36.80 37.10 C 41.00 40.90 C 45.20 1 1 53.9 59.3 1 1 28.0 25.3 0 .100 0 .101 m 1.5ke47a m 1.5ke51a 40.20 43.60 44.70 C 49.40 48.50 C 53.60 1 1 64.8 70.1 1 1 23.2 21.4 0 .101 0 .102 m 1.5ke56a m 1.5ke62a 47.80 53.00 53.20 C 58.80 58.90 C 65.10 1 1 77.0 85 .0 1 1 19.5 17.7 0 .103 0 .104 m 1.5ke68a m 1.5ke75a 58.10 64.10 64.60 C 71.40 71.30 C 78.80 1 1 92.0 103.0 1 1 16.3 14.6 0.104 0.105 m 1.5ke82a m 1.5ke91a 70.10 77.80 77.90 C 86.10 86.50 C 95.50 1 1 113.0 125.0 1 1 13.3 12.0 0.105 0.106 m 1.5ke100a m 1.5ke110 a 85.50 94.00 95.00 C 105.00 105.00 C 116.00 1 1 137.0 152.0 1 1 11.0 9.9 0.106 0.107 m 1.5ke120a m 1.5ke130a 102.00 111.00 114.00 C 126.00 124.00 C 137.00 1 1 165.0 179.0 1 1 9.1 8.4 0.107 0.107 m 1.5ke150a m 1.5ke160a 128.00 136.00 143.00 C 158.00 152.00 C 168.00 1 1 207.0 219.0 1 1 7.2 6.8 0.108 0.108 m 1.5ke170a m 1.5ke180a 145.00 154.00 162.00 C 179.00 171.00 C 189.00 1 1 234.0 246.0 1 1 6.4 6.1 0.108 0.108 m 1.5ke200a m 1.5ke220a 171.00 185.00 190.00 C 210.00 209.00 C 231.00 1 1 274.0 328.0 1 1 5.5 4.6 0.108 0.110 m 1.5ke250a m 1.5ke300a 214.00 256.00 237.00 C 263.00 285.00 C 315.00 1 1 344.0 414.0 1 1 5.0 5.0 0.110 0.111 m 1.5ke350a m 1.5ke400a 300.00 324.00 332.00 C 368.00 380.00 C 420.00 1 1 482.0 548.0 1 1 4.0 4.0 0.111 0.111 notes: 1. normal selecti on criteria for tvs devices is by rated stand - off voltage ( v wm ) and should be equal or greater than dc or continuous peak operating voltage. 2. tvs devices are tested to maximum peak pulse current ( i pp ) with clamping voltage monitored. this surge capability is one of the most significant electrical characteristics of the device and should be cons idered as part of customer quality inspections. 3. for bidirectional types having v wm of 8 volts and under, the i d leakage current is doubled. also for bidirectional parts, the capacitance will be half that shown in fig. 2 for zero bias. 4. for unidirectional, the forward voltage (v f ) is 3.5 volts maximum at 100 amps peak for 8.3 ms half - sine wave. downloaded from: http:///
rf0 1 008 , rev . e (1 1/15 /13 ) ?201 3 microsemi corporation page 5 of 7 m 1.5ke 6. 8a C m 1.5ke40 0ca (e3) graphs pulse time (tw) in s figure 1 peak pulse power vs pulse time (tw) in s t C time C ms test waveform parameters: tr=10 s, tp=1000s figure 2 pulse waveform for 10/1000 exponential surge p pp - peak pulse p ower - kw pulse current in percent of i pp downloaded from: http:///
rf0 1 008 , rev . e (1 1/15 /13 ) ?201 3 microsemi corporation page 6 of 7 m 1.5ke 6. 8a C m 1.5ke40 0ca (e3) graphs (continued) lead or ambient temperature c figure 3 derating curve v (br) C breakdown voltage C volts figure 4 typical capacitance vs. breakdown voltage peak pulse power (p pp ) or continuous average power in percent of 25c c t C capacitance C pico farads downloaded from: http:///
rf0 1 008 , rev . e (1 1/15 /13 ) ?201 3 microsemi corporation page 7 of 7 m 1.5ke 6. 8a C m 1.5ke40 0ca (e3) package dimensions notes: 1 dimensions are in inches. 2 millimeter equivalents are given for information only. 3 the major diameter is essentially constant along its length. 4 in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions symbol inches millimeters min max min max bd 0 .190 0 .205 4.826 5.207 bl 0 .360 0 .375 9.146 9.527 ld 0 .038 0 .042 0 .958 1.074 ll 1.10 1.625 27.9 41.28 downloaded from: http:///
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